Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Ultrathin ferroic HfO2– ZrO2 superlattice entrance pile for sophisticated transistors

In the basic Si transistor entrance pile, changing standard dielectric HfO2 with an ultrathin ferroelectric– antiferroelectric HfO2– ZrO2 heterostructure showing the adverse capacitance impact shows ultrahigh c.

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